s.m.i-don.au.ckoi lpioaucti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. darlington complementary silicon-power transistors ...designed lor general-purpose power amplifier and low frequency switching applications features: * monolithic construction with butt-in base-emitter shunt resistors. * high dc current gain - hfe = 3500(typ)<&lc maximum ratings characteristic collector-emitter voltage collector-base voltage emitter-base voltage collector current - continuous -peak base current total power dissipation?^ 25c derated above 25c operating and storage junction temperature range symbol vceo vcbo "no 'c 'b po l -t.to 2N6050 2n6057 60 60 2n6051 2n60s8 80 80 2n6052 2n6059 100 100 5 12 20 0.2 150 0.857 -65 to +200 unit v v v a a w w/c c thermal characteristics characteristic thermal resistance junction to case symbol rejc max 1.17 unit "c/w 175 150 125 100 75 50 25 figure-1 power derating 2s 50 75 100 125 150 175 200 t0 , temperature(? c) telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pnp npn 2N6050 2n6057 2n6051 2n6058 2n6052 2n6059 darlington 12ampere complementary silicon power transistors 60-100 volts 150 watts to-3 pin 1.base 2-em(tter collcctor4case) dm a b c 0 e f g h i j k millimeters min 38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.67 max 39.96 22.23 9.28 12.18 26.67 1.09 1.62 30,40 17.30 4.36 11.18 nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice intbrmation furnished by nj semi-conductors is believed to be both accurate and reliable at the time or"going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use, nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (t. = 25*c unless otherwise noted ) characteristic symbol win max untt off characteristics collector - emitter sustaining voltage (1) ( i, = 100 ma, i. - 0 ) 2N6050, 2n60s7 2n6051, 2n6058 2n6052, 2n6059 collector cutoff current ( vc, = 30 v, 1, = 0 ) 2N6050, zn6057 (ve, = 40v, l, = 0) 2n6051.2n605s ( vcb = 50 v, 1. = 0 ) 2n6052, 2n6059 collector cutoff current (vcb = rated vei0)vii(^ = 1.5v) ( vel = rated vc10, v,^ =. 1 .5 v, tc = 150c ) emitter cutoff current (veb = s.ov,ic = 0) vcecmsu*) 'ceo 'cex 'ebo 60 80 100 1.0 1.0 1.0 0.5 5.0 2.0 v ma ma ma on characteristics (1) dc current gain (ic = 6.0avce = 3.0v) (ic = 12a,vce = 3.0v) collector-emitter saturation voltage (ic = 6.0a, !b = 24ma) (ic=12a ib = 120ma) base-emitter on voltage (ic = 6.0avce = 3.0v) base-emitter saturation voltage (ic = 12a !b=120ma) hfe vce(?,, vbe(on) vbe(??, 750 100 18000 2.0 3.0 2.8 4.0 v v v dynamic characteristics current-gain-bandwidth product (2) ( lc = 5.0 a vce = 3.0 v, f = 1 .0 mhz ) small-signal current gain { lc = 5.0 a vce a 3.0 v, f = 1.0 khz ) 't "? 4.0 300 mhz (1) pulse test: pulse width 5 300 us , duty cycle 2.0%
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